Multi-beam mask writer, MBM-2000

A multi-beam mask writer, MBM-2000 is developed for the N3 semiconductor production. It is designed to accomplish high throughput with 16-nm beam and large current density 2.5 A/cm2. It is equipped with curve data format MBF2.0 to allow writing of small curve patterns in EUV masks and curvilinear OPC patterns in optical masks. To improve patterning resolution, pixel-level dose correction (PLDC) is implemented which corrects and enhances profile of dose deposited in resist. Writing tests have proven the global position accuracy that meets MBM-2000's specification and the effectiveness of fidelity improvement function of PLDC.