In this paper, a new paradigm for the operation principle of a ferroelectric random access memory (FeRAM) is presented. The new type of FeRAM is based on piezo–acoustic phenomena in ferroelectric films. It is called Acousto-Ferroelectric RAM (AFeRAM) because its operation is based on the piezo–acoustic method for detecting intrinsic remanent polarization of a ferroelectric memory cell.