并五苯
薄膜晶体管
材料科学
光电子学
噪音(视频)
栅极电介质
有机半导体
电介质
闪烁噪声
晶体管
次声
图层(电子)
电气工程
纳米技术
物理
电压
噪声系数
声学
计算机科学
人工智能
放大器
工程类
图像(数学)
CMOS芯片
作者
Chuanyu Han,L. X. Qian,C. H. Leung,C. M.,P.T. Lai
摘要
By including the generation-recombination process of charge carriers in conduction channel, a model for low-frequency noise in pentacene organic thin-film transistors (OTFTs) is proposed. In this model, the slope and magnitude of power spectral density for low-frequency noise are related to the traps in the gate dielectric and accumulation layer of the OTFT for the first time. The model can well fit the measured low-frequency noise data of pentacene OTFTs with HfO2 or HfLaO gate dielectric, which validates this model, thus providing an estimate on the densities of traps in the gate dielectric and accumulation layer. It is revealed that the traps in the accumulation layer are much more than those in the gate dielectric, and so dominate the low-frequency noise of pentacene OTFTs.
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