可扩展性
堆栈(抽象数据类型)
闪存
闪光灯(摄影)
计算机科学
计算机硬件
平版印刷术
过程(计算)
常规存储器
电子工程
嵌入式系统
计算机存储器
材料科学
光电子学
半导体存储器
工程类
操作系统
交错存储器
视觉艺术
艺术
作者
Hidetake Tanaka,M. Kido,K. Yahashi,M. Oomura,Ryoichi Katsumata,M. Kito,Y. Fukuzumi,Masato Sato,Y. Nagata,Y. Matsuoka,Y. Iwata,H. Aochi,A. Nitayama
标识
DOI:10.1109/vlsit.2007.4339708
摘要
We propose Bit-Cost Scalable (BiCS) technology which realizes a multi-stacked memory array with a few constant critical lithography steps regardless of number of stacked layer to keep a continuous reduction of bit cost. In this technology, whole stack of electrode plate is punched through and plugged by another electrode material. SONOS type flash technology is successfully applied to achieve BiCS flash memory. Its cell array concept, fabrication process and characteristics of key features are presented.
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