Stoichiometry dependence and thermal stability of conducting NdGaO3/SrTiO3 heterointerfaces

The structural and electrical properties of conducting NdGaO3/SrTiO3 (NGO/STO) heterostructures grown at various deposition temperatures were investigated. X-ray diffraction and X-ray photoelectron spectroscopy reveal a strong impact of the growth temperature on both crystallinity and cation stoichiometry of the NGO thin films. This stoichiometry variation significantly affects the electrical properties of the NGO/STO interface. High temperature conductance measurements under oxygen equilibrium conditions show a distinct conductance contribution of the NGO/STO interface up to 1000 K and exclude a conduction effect caused by a mere reduction of the STO substrate. Above 1000 K, the interface conduction is degrading due to a thermal instability. Both stoichiometry variation in as-grown films and thermal instability are attributed to the preferential evaporation of gallium from the NGO thin films at elevated temperatures.