AVALANCHE BREAKDOWN VOLTAGE OF GaAs p+-n-n+ DIODE STRUCTURES

The ionization rates of GaAs are first empirically determined from breakdown voltage measurements of p+-n junctions with thick n layers. The theoretical analysis is then extended to p+-n-n+ structures in which space-charge punch-through occurs before breakdown takes place. The avalanche breakdown voltages of GaAs p+-n-n+ diode structures are calculated as a function of the n layer thickness W as well as the doping density n. Comparison of the theoretical calculation with experimental data shows very good agreement.