磁阻随机存取存储器
非易失性随机存取存储器
缩放比例
计算机科学
非易失性存储器
维数(图论)
泄漏(经济)
产品(数学)
班级(哲学)
随机存取存储器
嵌入式系统
电气工程
半导体存储器
计算机硬件
工程类
计算机存储器
内存刷新
人工智能
数学
几何学
纯数学
经济
宏观经济学
作者
Tae Young Lee,J. M. Lee,Min Kyu Kim,Junseok Oh,Jeong‐Whan Lee,Hongsil Jeong,P. H. Jang,M. K. Joo,Kyung‐Soo Suh,S. H. Han,D.-E. Jeong,T. Kai,J. H. Jeong,J.-H. Park,J. H. Lee,Y. H. Park,Eun-Soo Chang,Y. K. Park,Hong‐Jae Shin,Yumi Ji
标识
DOI:10.1109/iedm45625.2022.10019430
摘要
We present the most energy-efficient 16 Mb non-volatile RAM (nvRAM) product with nearly unlimited endurance by using 28-nm embedded MRAM (eMRAM) technology. Among commercially available standalone nvRAM products, this product features the smallest package dimension of 30 mm 2 at 16 Mb and best-in-class active power of 14 mW (read) and 27 mW (write). By extensive package testing, endurance over 1E14 cycles at - 25 °C and 10-years data retention at 89 °C have also been verified. Extending 28-nm eMRAM technology to 14-nm FinFET resulted in 33% area scaling and 2.6× faster read cycle time. This proves the potential of eMRAM technology as a low-leakage working memory solution for SoC applications.
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