Temperature characterization of 660 nm quantum well semiconductor laser

We introduce a compressively strained Ga0.32In0.68P/GaAs multi-quantum-wells semiconductor laser with well width of 18 nm to avoid well with fluctuation of small size well and maintains the critical width condition regards to mismatch between the well material and the sample substrate. In this framework, we experimentally test the temperature operation of the electrical and optical properties of a 700 µm Fabry–Perot cavity edge-emitting GaInP quantum-well semiconductor laser over a wide range of temperatures (-80 to 100 °C). The results showed a high operation temperature performance up to 100 °C and 30 mW optical power. Nevertheless, above 50 °C it exhibited significant increases of the threshold current due to increases of the thermally activated leakage current at high temperatures. Similarly, the differential quantum efficiencies of the lasers showed a decrease above 50 °C, which confirms that increasing the threshold gain requirements can offset the increasing of losses mechanisms at high temperature. The characteristic (To) temperature was found to be 96 °C and the nearfield of the sample showed a good symmetry when it was fitted to a Gaussian distribution. The 660 nm GaInP/AlGaInP/GaAs quantum-well laser showed appropriate temperature stability with high optical quality, which makes it a promising device in phototherapy applications.