选择(遗传算法)
功率(物理)
功能(生物学)
热阻
材料科学
功率MOSFET
热的
核工程
环境科学
可靠性工程
电气工程
计算机科学
热力学
工程类
MOSFET
物理
晶体管
电压
进化生物学
生物
人工智能
作者
Krzysztof Górecki,Krzysztof Posobkiewicz
标识
DOI:10.24425/mms.2024.149702
摘要
The paper describes the results of investigations illustrating the influence of the method of determining the excess of junction temperature and the selection of a function approximating the thermometric characteristic used in the procedure of measuring thermal resistance of a power MOS transistor on the measurement results. The investigations involved the measurements made using an indirect electrical method. Three methods of determining the excess of junction temperature of the transistor are presented, using a linear function and nonlinear function approximating thermometric characteristics. The thermal resistance measurement results obtained using each of the considered methods were compared. The measurement error caused by the selection of the considered methods was also analyzed.
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