Comparison of single Shockley-type stacking fault expansion rates in 4H-SiC under ultraviolet illumination after hydrogen or fluorine ion implantation

Abstract The expansion of single Shockley-type stacking faults (1SSFs) was observed in 4H-SiC below the ion-implanted region of hydrogen or fluorine under ultraviolet illumination, and it was found that 1SSF expansion slowed, the expansion angle decreased, and the termination of 1SSF expansion became deeper as the dose of implanted ions was increased. A comparison of implanted ion species revealed that fluorine ion implantation more strongly suppresses 1SSF expansion under ultraviolet illumination than hydrogen ion implantation. The thermal stability of hydrogen and fluorine was also compared by using depth profiles of the implanted species concentrations before and after annealing. Fluorine was found to have superior thermal stability to that of hydrogen.