Are 2D transition metal dichalcogenides transistors the future silicon replacement or hype?

We present the case for 2D transition metal dichalcogenides [TMD] replacing silicon transistors at ultra-scaled gate lengths. This new TMD 2D transistor technology has numerous clear advantages but experimentally there are still unsolved questions, therefore we will share both our current successes of high performance 2D transistors, as well as some of the current roadblocks. This talk includes a review of our progress in materials, contacts, gate stack and stacked gate all around 2D nanoribbons.