半导体
纳米线
纳米技术
灵活性(工程)
数码产品
材料科学
瓶颈
柔性电子器件
工程物理
光电子学
电气工程
计算机科学
工程类
数学
统计
嵌入式系统
作者
Kang Chen,Junan Pan,Weinan Yin,Chao Ma,Longlu Wang
标识
DOI:10.1016/j.cclet.2023.108226
摘要
Flexible electronics technology is considered as a revolutionary technology to unlock the bottleneck of traditional rigid electronics that prevalent for decades, thereby fueling the next-generation electronics. In the past few decades, the research on flexible electronic devices based on organic materials has witnessed rapid development and substantial achievements, and inorganic semiconductors are also now beginning to shine in the field of flexible electronics. As validated by the latest research, some of the inorganic semiconductors, particularly those at low dimension, unexpectedly exhibited excellent mechanical flexibility on top of superior electrical properties. Herein, we bring together a comprehensive analysis on the recently burgeoning low-dimension inorganic semiconductor materials in flexible electronics, including one-dimensional (1D) inorganic semiconductor nanowires (NWs) and two-dimensional (2D) transition metal dichalcogenides (TMDs). The fundamental electrical properties, optical properties, mechanical properties and strain engineering of materials, and their performance in flexible device applications are discussed in detail. We also propose current challenges and predict future development directions including material synthesis and device fabrication and integration.
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