材料科学
范德瓦尔斯力
光电子学
记忆电阻器
电阻随机存取存储器
退火(玻璃)
纳米技术
电极
电气工程
化学
分子
有机化学
物理化学
复合材料
工程类
作者
Ki-Tae Kim,Tae Wook Kim,Yeonsu Jeong,Sam Park,Junho Kim,Hyunmin Cho,Sun-Kyung Cha,Yong-Sung Kim,Heesun Bae,Yeonjin Yi,Seongil Im
出处
期刊:ACS Nano
[American Chemical Society]
日期:2023-02-16
卷期号:17 (4): 3666-3675
标识
DOI:10.1021/acsnano.2c10596
摘要
Two-dimensional (2D)-layered material tantalum disulfide (2H-TaS2) is known to be a van der Waals conductor at room temperature. Here, 2D-layered TaS2 has been partially oxidized by utraviolet-ozone (UV-O3) annealing to form a 12-nm-thin TaOX on conducting TaS2, so that the TaOX/2H-TaS2 structure might be self-assembled. Utilizing the TaOX/2H-TaS2 structure as a platform, each device of a β-Ga2O3 channel MOSFET and a TaOX memristor has been successfully fabricated. An insulator structure of Pt/TaOX/2H-TaS2 shows good a dielectric constant (k ∼ 21) and strength (∼3 MV/cm) of achieved TaOX, which is enough to support a β-Ga2O3 transistor channel. Based on the quality of TaOX and low trap density of the TaOX/β-Ga2O3 interface, which is achieved via another UV-O3 annealing, excellent device properties such as little hysteresis (<∼0.04 V), band-like transport, and a steep subthreshold swing of ∼85 mV/dec are achieved. With a Cu electrode on top of the TaOX/2H-TaS2 structure, the TaOX acts as a memristor operating around ∼2 V for nonvolatile bipolar and unipolar mode memories. The functionalities of the TaOX/2H-TaS2 platform become more distinguished finally when the Cu/TaOX/2H-TaS2 memristor and β-Ga2O3 MOSFET are integrated to form a resistive memory switching circuit. The circuit nicely demonstrates the multilevel memory functions.
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