Reduction of carrier density and enhancement of the bulk Rashba spin-orbit coupling strength in Bi2Te3/GeTe superlattices

Featured with the large Rashba constant (αR ∼ 4.2 eVÅ) coupled with the ferroelectricity, GeTe has attracted much interest, proposing novel energy-efficient spintronic devices. However, those approaches are hampered by the high hole density of GeTe around 1020-1021 cm−3, which deteriorates both the ferroelectricity and the bulk Rashba effect of GeTe. To solve this problem, we have investigated the superlattices composed of Bi2Te3 and GeTe ([BT|GT] SL), the former of which is known as a topological insulator (TI) with typically n-type conduction and strong spin-orbit coupling. We have investigated the magnetotransport properties of 25 [BTx|GTy]z SLs with varying thicknesses (x, y: the thickness in the multiples of the unit cell of the respective layer) of each layer and the repetition number (z) systematically. We have observed a minimum carrier density of 5.7 × 1019 cm−3 in [BT6|GeTe6]6 superlattice sample smaller than that (∼4.4 ×1020 cm−3) of GeTe single film by an order. In addition, we have found that some [BT|GT] SLs with reduced carrier density have a larger Rashba constant compared to that of a single GeTe film. This is explained by the change of the spin polarization which can be modulated by the Fermi level in the Rashba band. These results provide a viable way to realize robust ferroelectricity and strong SOC in GeTe-related material systems simultaneously.