Hypothetical investigation of electron movement cross section at metal-semiconductor

A theoretical studies and calculation the cross-section for electron transfer at metal/semiconductor interfaces material depending on quantum description. Cross sections of charge transfer for Ag with Si ,TiO2 ,and ZnO were carried out using simplified models of the system at the Multi driving force energy at interaction in the devices interface . Investigation and evaluation of the cross section for electron transfer aET at metal/semiconductor system is depending on the coefficient; driving force energy (ϑ), transfer energy orientation energy, wave number ϑ, mean Refractive index n, amplitude of electronic coupling coefficient 〈|Λ(0)¯|2〉 and the lifetime of electron transfer τET. The cross section for electron transfer σET at metal/semiconductor system evaluated using MATLAP program. The result of cross section show that cross section increases with increasing the driving force energy and coupling coefficient and vice versa.