2D/3D Perovskite Surface Passivation-Enabled High-Detectivity Near-Infrared Photodiodes

Due to high responsivity and wide spectral sensitivity, metal halide perovskite photodiodes have a wide range of applications in the fields of visible light and near-infrared photodetection. Specific detectivity is an important quality factor for high-performance perovskite-based photodiodes, while one of the keys to achieving high detectivity is to reduce dark current. Here, 3-fluoro phenethylammonium iodide (3F-PEAI) was used to passivate the perovskite surface and form the two-dimensional (2D) perovskite on the three-dimensional (3D) perovskite surface. The as-fabricated passivated perovskite photodiodes with 2D/3D hybrid-dimensional perovskite heterojunctions showed two orders of magnitude smaller dark current, larger open circuit voltage and faster photoresponse, when compared to the control perovskite photodiodes. Meanwhile, it maintained almost identical photocurrent, achieving a high specific detectivity up to 2.4 × 1012 Jones and over the visible-near-infrared broadband photodetection. Notably, the champion photoresponsivity value of 0.45 A W-1 was achieved at 760 nm. It was verified that the 2D capping layers were able to suppress trap states and accelerate photocarrier collection. This work demonstrates strategic passivation of surface iodine vacancies, offering a promising pathway for developing ultrasensitive and low-power consumption photodetectors based on metal halide perovskites.