Investigation of the Visible Photocatalytic–Fenton Reactive Composite Polishing Process for Single-Crystal SiC Wafers Based on Response Surface Methodology

The third-generation semiconductor single-crystal silicon carbide (SiC), as a typical difficult-to-machine material, improves the chemical reaction rate on the SiC surface during the polishing process, which is key to realizing efficient chemical mechanical polishing (CMP). In this paper, a new core-shell structure Fe3O4@MIL-100(Fe) magnetic catalyst was successfully synthesized, which can effectively improve the reaction rate during the SiC polishing procesSs. The catalyst was characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), and X-ray photoelectron spectroscopy (XPS), and was used as a heterogeneous photocatalyst for chemical mechanical polishing, and the polishing results of SiC were optimized using response surface methodology (RSM). The experimental results show that the surface roughness of SiC can reach the minimum value of 0.78 nm when the polishing pressure is 0.06 MPa, the polishing speed is 60 rpm, and the polishing flow rate is 12 mL/min. The results of the study provide theoretical support for the visible photocatalysis-assisted CMP of SiC.