材料科学
欧姆接触
晶体管
电子线路
纳米电子学
场效应晶体管
接触电阻
纳米技术
光电子学
CMOS芯片
电极
灵敏度(控制系统)
电子工程
电气工程
电压
图层(电子)
物理化学
工程类
化学
作者
Shichao Zhang,You Wu,Feng Gao,Huiming Shang,Jia Zhang,Zhonghua Li,Yongqing Fu,PingAn Hu
标识
DOI:10.1002/adfm.202205299
摘要
Abstract 2D materials, with their extraordinary physical and chemical properties, have gained extensive interest for physical, chemical and biological sensing applications. However, 2D material‐based devices, such as field effect transistors (FETs) often show high contact resistance and low output signals, which severely affect their sensing performance. In this study, a new strategy is developed to combine metallic and semiconducting polymorphs of transition‐metal dichalcogenides (TMDCs) to solve this critical issue. Such a phase engineering methodology to integrate large‐scale and spatially assembled multilayers of 2H MoTe 2 FETs with coplanar metallic 1T′ MoTe 2 contacts is applied. Such in‐plane heterophase‐based FETs exhibit an ohmic contact behavior with an extremely low contact resistance due to the coplanar and seamless connections between 2H and 1T′ phases of MoTe 2 . These 1T′/2H/1T′ based FETs are successfully demonstrated for detecting NH 3 with high current outputs increased up to microamp levels without using any conventional interdigital electrodes, which is compatible with the current CMOS circuits for practical applications. Furthermore, the as‐fabricated sensors can detect NH 3 gas concentrations down to 5 ppm at room temperature. This study demonstrates a new strategy of applying the heterophase MoTe 2 ‐based nanoelectronics for high‐performance sensing applications.
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