An Economical Three-Dimension (3-D) Hall Device on 0.15-μm Bipolar-CMOS-DMOS (BCD) Platform

This article presents a three-dimension (3-D) Hall device fabricated on 0.15- $\mu \text{m}$ bipolar-CMOS-DMOS (BCD) platform without additional masks or processes. The 3-D Hall device is designed to detect the three-axis magnetic field in space with lateral and vertical Hall device components. The lateral Hall device features a shallow-trench-isolation (STI) structure and a thin magnetic-sensitive well. The lateral Hall device has an input resistance of 25.1 $\text{K}\Omega $ and its current-related sensitivity is 378 V/AT, with appropriated size and geometry. Its fully isolated structure guarantees high resistance stability for precise measurement. The vertical Hall device utilizes a deep magnetic-sensitive well to provide more space for the rotation of current. By optimizing the position of the Hall electrodes and the width of the device, the input resistance is measured at 10.4 $\text{k}\Omega $ and the current-related sensitivity of the vertical Hall device reaches 161 V/AT. The proposed 3-D Hall device indicates the cost-efficient feasibility of fabricating high-performance Hall sensor chips on the 0.15- $\mu \text{m}$ BCD platform.