多铁性
Berry连接和曲率
布里渊区
铁磁性
凝聚态物理
自旋电子学
点反射
格子(音乐)
反铁磁性
物理
量子力学
铁电性
几何相位
电介质
声学
作者
Yibo Liu,Feng Yun,Ying Dai,Baibiao Huang,Yandong Ma
出处
期刊:Nano Letters
[American Chemical Society]
日期:2024-03-06
卷期号:24 (11): 3507-3514
标识
DOI:10.1021/acs.nanolett.4c00436
摘要
Layertronics, rooted in the layer Hall effect (LHE), is an emerging fundamental phenomenon in condensed matter physics and spintronics. So far, several theoretical and experimental proposals have been made to realize LHE, but all are based on antiferromagnetic systems. Here, using symmetry and tight-binding model analysis, we propose a general mechanism for engineering layertronics in a two-dimensional ferromagnetic multiferroic lattice. The physics is related to the band geometric properties and multiferroicity, which results in the coupling between Berry curvature and layer degree of freedom, thereby generating the LHE. Using first-principles calculations, we further demonstrate this mechanism in bilayer (BL) TcIrGe2S6. Due to the intrinsic inversion and time-reversal symmetry breakings, BL TcIrGe2S6 exhibits multiferroicity with large Berry curvatures at both the center and corners of the Brillouin zone. These Berry curvatures couple with the layer physics, forming the LHE in BL TcIrGe2S6. Our work opens a new direction for research on layertronics.
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