范德瓦尔斯力
凝聚态物理
铁电性
异质结
半金属
拓扑绝缘体
拓扑(电路)
材料科学
物理
量子力学
电气工程
工程类
电介质
分子
带隙
作者
D. J. P. de Sousa,Seungjun Lee,Qiangsheng Lu,R. G. Moore,Matthew Brahlek,Jian‐Ping Wang,Guang Bian,Tony Low
出处
期刊:Cornell University - arXiv
日期:2023-01-01
标识
DOI:10.48550/arxiv.2311.18026
摘要
We show that proximity effects can be utilized to engineer van der Waals heterostructures (vd- WHs) displaying spin-ferroelectricity locking, where ferroelectricity and spin states are confined to different layers, but are correlated by means of proximity effects. Our findings are supported by first principles calculations in $\alpha$-Bi/SnSe bilayers. We show that such systems support ferroelectrically switchable non-linear anomalous Hall effect originating from large Berry curvature dipoles as well as direct and inverse spin Hall effects with giant bulk spin-charge interconversion efficiencies. The giant efficiencies are consequences of the proximity-induced semimetallic nature of low energy electron states, which are shown to behave as two-dimensional pseudo-Weyl fermions by means of symmetry analysis, first principles calculations as well as direct angle-resolved photoemission spectroscopy measurements.
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