薄膜
热氧化
材料科学
化学气相沉积
氧化物
镓
太阳能电池
等离子体
分子束外延
光电子学
表面粗糙度
分析化学(期刊)
化学工程
外延
纳米技术
化学
复合材料
冶金
图层(电子)
物理
量子力学
色谱法
工程类
作者
Tong Su,Bohan Xiao,Zikang Ai,Lingjie Bao,Wencheng Chen,Yuheng Shen,Qijin Cheng,Kostya Ostrikov
标识
DOI:10.1016/j.apsusc.2023.157162
摘要
Almost all reported high-performance β-Ga2O3 thin films are grown by molecular beam epitaxy, metal–organic chemical vapor deposition, and pulsed laser deposition at a very high cost and low throughput. To explore the fast growth method for β-Ga2O3 with high quality and low cost, a custom-made plasma-enhanced chemical vapor deposition is designed for innovative thermal oxidation of gallium nitride. It is shown that the growth rate of gallium oxide thin films prepared by the plasma-enhanced thermal oxidation (PETO) is 2 to 5 times higher than that of thermal oxidation process under similar growth conditions. For β-Ga2O3 thin films prepared by the PETO, the high-rate growth, low root-mean-square roughness, and growth with the orientation along (2¯ 01) lattice plane are achieved. The developed growth mechanism elucidates the role of the O2 and Ar + O2 plasma-surface interactions in the β-Ga2O3 growth process. Solar-blind photodetectors based on the β-Ga2O3 films grown by the PETO with a high solar blind-to-UV rejection ratio (R245 nm/R360 nm = 10.2), a low rise time of 0.17 s, and a low fall time of 0.2 s are demonstrated. The plasma-surface interaction effects are generic and are applicable to a broader range of materials systems and devices for diverse applications.
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