绝缘栅双极晶体管
可靠性(半导体)
钝化
功率半导体器件
材料科学
电气工程
电压
双极结晶体管
功率(物理)
可靠性工程
电子工程
工程类
晶体管
纳米技术
物理
图层(电子)
量子力学
作者
Meng Cui,Zhongyuan Chen,Yaosheng Li,Yihui Zhang,Xiu Yang,Zhibin Zhao
标识
DOI:10.1007/978-981-99-0451-8_101
摘要
The requirement for domestic high voltage and large power insulated gate bipolar transistor (IGBT) is urgent, while the reliability of domestic IGBTs limit their application. In order to improve high temperature reverse bias (HTRB) reliability performance of high voltage bond wired IGBT module, failure analysis is carried out aiming at failed 3300 V IGBT module after HTRB test in this paper. Firstly, the terminal structure of IGBT is introduced. Then, the main failure modes on the device electrical performance and typical failure chip morphologies are summarized. The failure mechanisms of IGBT and diode chips are analyzed in detail, by sample preparation and scanning electron microscope (SEM) analyses, and the corresponding improvement measures are put forward. Finally, the device is improved by passivation process and terminal structure optimization and tested under HTRB for 1000 h at 150 ℃.The test results show that HTRB reliability of the device is improved.
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