神经形态工程学
记忆电阻器
MNIST数据库
稳健性(进化)
计算机科学
人工神经网络
材料科学
可塑性
理论(学习稳定性)
电子工程
尖峰神经网络
生物系统
电导
人工智能
热稳定性
电阻随机存取存储器
二进制数
非易失性存储器
电压
热的
纳米技术
突触重量
纳米尺度
随机存取存储器
作者
Xingyu Chen,Jiahao Gu,Ziyan Zhang,Jiashu Chen,Wei Jiang,Bin Ge,Sheng Li,Quan Xu,Jianhua Qiu,Huafei Guo,Sai Jiang
标识
DOI:10.1088/1361-6463/ae0c1f
摘要
Abstract Ensuring long-term robustness and environmental stability remains a critical challenge for organic memristors, despite their potential as low-cost, energy-efficient neuromorphic components. Here, we report a solution-processed Ag/poly(benzimidazobenzophenanthroline) (BBL)/Au organic memristor with excellent electrical performance and dual-mode plasticity. Benefiting from the chemical and structural stability of the BBL, the devices exhibited high endurance (>10 4 cycles) and over 100 linearly tunable conductance states. Importantly, the device maintained stable performance between 300 K to 413 K and after long-term aqueous exposure, demonstrating outstanding thermal and environmental robustness. Furthermore, short-term plasticity (STP) and long-term plasticity (LTP) can be independently modulated via pulse schemes, enabling dynamic tuning of synaptic behaviors within a unified architecture. These functions support both reservoir computing (RC) and binarized spiking neural networks (BSNNs). The STP-enabled RC system achieves 91.7% accuracy on MNIST with low training cost, whereas the resource-efficient BSNN implementation attains full-precision-like accuracy using LTP-based binary memristive states. These results suggest that BBL-based organic memristors are scalable, reconfigurable, and reliable candidates for edge-oriented, low-power neuromorphic computing.
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