二氯硅烷
氮化硅
原子层沉积
分解
化学
热分解
硅
吸附
无机化学
薄膜
化学气相沉积
解吸
沉积(地质)
氮化物
氯化物
图层(电子)
化学工程
材料科学
物理化学
纳米技术
有机化学
古生物学
沉积物
工程类
生物
作者
Tsung-Hsuan Yang,Erik S. Cheng,Samuel M. Johnson,Toshihiko Iwao,Junfeng Zhao,John G. Ekerdt,Peter L. G. Ventzek,Gyeong S. Hwang
标识
DOI:10.1016/j.apsusc.2023.157432
摘要
Plasma-enhanced atomic layer deposition (PEALD) has been demonstrated to be a promising technique for controlled growth of silicon nitride (SiNx) thin films. Based on first-principles calculations, we present the effects of by-product production on the reaction of dichlorosilane (DCS) as the Si precursor with a hydrogen-terminated N-rich surface created upon ammonia (NH3) plasma treatment relevant to thin film growth. The presence of amines, especially primary amines (–NH2), plays a key role in DCS decomposition by generating H and Cl atoms as by-products. Our work clearly demonstrates that the by-products can be strongly bound to the surface by forming stable –NH3+Cl- complexes, which may in turn affect the SiNx ALD process. The HCl desorption reaction, i.e., –NH3+Cl- → –NH2 + HCl(g), is predicted to be endothermic by 1.1–1.2 eV, depending on HCl surface coverage. The large HCl binding energy suggests that a high thermal energy would be required for its removal from the surface, as evidenced by results from experimental spectroscopic analysis. We also discuss how the by-product presence inhibits DCS adsorption and decomposition, leading to a decrease in the SiNx growth rate.
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