神经形态工程学
材料科学
突触
光电子学
人工神经网络
长时程增强
异质结
卷积神经网络
晶体管
突触重量
计算机科学
电介质
光开关
帕利烯
人工智能
生物系统
峰值时间相关塑性
刺激
突触可塑性
RGB颜色模型
纳米技术
信号(编程语言)
电荷(物理)
电子工程
有机太阳能电池
作者
Seungme Kang,Jisoo Park,Jinwoong Hong,Jinmin Park,Jeongbo Lee,Hyeonjung Kim,Wonjun Shin,Eva Bestelink,Radu A. Sporea,Seyong Oh,Chung Whan Lee,Yun‐Hi Kim,Hocheon Yoo
标识
DOI:10.1002/adfm.202525060
摘要
Abstract A neuromorphic optical synapse transistor based on a spectrally tuned floating‐gate synapse (STFGS), designed to achieve optoelectronic synaptic behavior, is presented. The device incorporates a heterojunction structure composed of a dinaphtho[2,3‐b:2‘,3‘‐f]selenopheno[3,2‐b]selenophene (DNSS) upper channel and an E)‐2‐(2‐((6‐(di‐p‐tolylamino)‐4,4‐dimethyl‐4H‐indeno[1,2‐b]thiophen‐2‐yl)methylene)‐3‐oxo‐2,3‐dihydro‐1H‐inden‐1‐ylidene)malononitrile (Dta‐Inth‐IC) floating‐gate layer. A parylene dielectric layer strategically positioned between the DNSS and Dta‐Inth‐IC layers functions as a barrier, enabling selective charge storage within the floating‐gate architecture. Synaptic plasticity is analyzed by varying stimulation conditions, such as the on‐time, off‐time, and pulse number of optical pulses. Long‐term potentiation (LTP) is observed with efficient charge trapping in the floating‐gate under 660 nm light stimulation. Energy band alignment analysis confirms charge accumulation in Dta‐Inth‐IC under 660 nm light, while 455 nm light stimulation induced rapid recombination in DNSS. The applicability of artificial neural networks (ANN) based on the potentiation curves obtained from STFGS is evaluated. For this purpose, a convolutional neural network (CNN)‐based ANN is designed and performs classification tasks using the Fashion Modified National Institute of Standards and Technology (Fashion MNIST) dataset. Through repeated training, a maximum recognition rate of 91.37% for 660 nm light stimulation is achieved, demonstrating that the STFGS successfully mimics synaptic behavior.
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