材料科学
极化子
光电流
光热治疗
兴奋剂
光电子学
分解水
钝化
半导体
光电化学
辐照
载流子
光电化学电池
纳米技术
光电导性
光热效应
电极
氢
能量转换效率
扩散
矩形势垒
载流子寿命
电子
作者
Wenfeng Li,Guocheng Lv,Meng Liu,Fanyue Zhao,Zetian He,Guihong Li,Wenping Wang,Daimei Chen,Libing Liao
标识
DOI:10.1002/adfm.202523344
摘要
Abstract BiVO 4 has shown excellent potential as a metal‐oxide semiconductor photoanode material for photoelectrochemical water splitting technology. However, the low carrier‐transport efficiency severely inhibited photoelectrochemical activity. Herein, element doping and photothermal activation were simultaneously employed to stimulate polaron hopping for carrier‐transport enhancement. Mo doping can passivate both shallow and deep trap states in BiVO 4 , thereby enhancing carrier density and reducing the energy barrier for polaron hopping. The decoration of photothermal material Ni 2 P can not only further thermally activate the polaron, but effectively extract holes out of Mo:BVO 4 for surface reactions. Additionally, the photothermal effect induced by Ni 2 P under 808 nm near‐infrared light (NIR) (3 W cm −2 ) irradiation lowers the energy barrier of the rate‐determining step in the oxygen evolution reaction, accelerates O 2 evolution at the electrode interface, and enabling faster re‐exposure of active sites. At a result, the trap‐limited mode electron diffusion coefficients (Dn‐L) of the modified BiVO4 photoanode is greatly increased to 5.8 × 10 −8 cm 2 ·s −1 , achieves a high separation efficiency of 92.2% and a remarkable photocurrent of 6.38 mA·cm −2 under AM 1.5G + 808 nm NIR irradiation at 1.23 VRHE. This study provides new insights into photoelectrochemical energy conversion by enhancing polaron hopping to improve carrier shunting and transfer efficiency.
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