A Programmable In-Situ Logic-in-Memory With Full Boolean and Arithmetic Functions Through Voltage-Gated Spin-Orbit Torque

Spin-orbit torque magnetic random-access memory (SOT-MRAM) is a promising candidate for non-volatile logic-in-memory (LIM) computing. In this letter, we present a novel all-electrical spintronic in-situ LIM based on 80 nm IrMn-based perpendicular magnetic tunnel junctions (MTJs). Field-free SOT switching is achieved with the assistance of the in-plane exchange bias. Based on voltage-gated SOT switching, we experimentally demonstrate full 16 Boolean logic functions using two MTJs in an array. Logic inputs and outputs are directly stored in the resistance states of MTJs, enabling in-situ storage and computation within the same device. Additionally, we implement spintronic arithmetic logic units, including adders, subtractors, and multipliers. This approach paves the way for advanced LIM computing applications owing to its high density, low power, programmability, and scalability.