材料科学
异质结
制作
半导体
纳米技术
光电子学
化学气相沉积
可制造性设计
图层(电子)
光子学
遮罩(插图)
电气工程
医学
工程类
艺术
病理
视觉艺术
替代医学
作者
Sang‐Hoon Choi,Young Jae Kim,Jae Heung Jeon,Byoung Hun Lee,Jeong Ho Cho,Sungjoo Lee
标识
DOI:10.1021/acsami.9b13660
摘要
The construction of manufacturable, stable, high-quality metal/semiconductor junction structures is of fundamental importance to implement higher-level devices and circuit systems. Owing to the unique features of two-dimensional (2D) materials, namely, that intralayer atoms are covalently bonded, whereas interlayer atoms are held together by weak attractive interactions, there are several studies on the fabrication and identification of the peculiar properties of various 2D heterostructures. However, large-scale 2D lateral metal/semiconductor junction structures with acceptable levels of manufacturability and quality have not yet been demonstrated, which is among the critical technological hurdles to overcome for the realization of 2D material-based electronic and photonic devices. This paper reports the fabrication of a manufacturable large-scale metal (Mo2C)/semiconductor (MoS2) junction via selective synthetic integration and a lithographically patterned SiO2 masking layer. It is demonstrated that whereas chemical conversion to Mo2C occurs in the exposed chemical vapor deposition-grown MoS2 part, the MoS2 layer under the SiO2 masking layer is protected from chemical conversion, so that a scalable Mo2C/MoS2 heterostructure is integrated down to nanometer-scale dimensions. Excellent contact resistance of 2.1 kΩ·μm is achieved from this lateral junction structure, providing a manufacturable and highly stable metal/semiconductor building block for real implementation of 2D material-based nanoscale device integration.
科研通智能强力驱动
Strongly Powered by AbleSci AI