量子点
卤化物
材料科学
配体(生物化学)
纳米技术
碘化物
带隙
光电子学
化学工程
化学
无机化学
生物化学
工程类
受体
作者
Xiaokun Yang,Ji Yang,Javid Khan,Hui Deng,Shengjie Yuan,Jian Zhang,Yong Xia,Feng Deng,Xue Zhou,Umar Farooq,Zhixin Jin,Haisheng Song,Chun Cheng,Mohamed Sabry,Jiang Tang
出处
期刊:Nano-micro Letters
[Springer Science+Business Media]
日期:2020-01-24
卷期号:12 (1)
被引量:37
标识
DOI:10.1007/s40820-020-0372-z
摘要
Abstract The recent emerging progress of quantum dot ink (QD-ink) has overcome the complexity of multiple-step colloidal QD (CQD) film preparation and pronouncedly promoted the device performance. However, the detrimental hydroxyl (OH) ligands induced from synthesis procedure have not been completely removed. Here, a halide ligand additive strategy was devised to optimize QD-ink process. It simultaneously reduced sub-bandgap states and converted them into iodide-passivated surface, which increase carrier mobility of the QDs films and achieve thicker absorber with improved performances. The corresponding power conversion efficiency of this optimized device reached 10.78%. (The control device was 9.56%.) Therefore, this stratege can support as a candidate strategy to solve the QD original limitation caused by hydroxyl ligands, which is also compatible with other CQD-based optoelectronic devices.
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