EUV resist outgassing analysis for the new platform resists at EIDEC

极紫外光刻 放气 抵抗 极端紫外线 材料科学 平版印刷术 光学 污染 光电子学 纳米技术 化学 物理 激光器 生态学 有机化学 图层(电子) 生物
作者
Eishi Shiobara,Yukiko Kikuchi,Shinji Mikami,Takeshi Sasami,Takashi Kamizono,Shinya Minegishi,Takakazu Kimoto,Toru Fujimori,Takeo Watanabe,Tetsuo Harada,Hiroo Kinoshita,Satoshi Tanaka
出处
期刊:Proceedings of SPIE [SPIE]
卷期号:9776: 97762H-97762H 被引量:2
标识
DOI:10.1117/12.2219424
摘要

The suppression of outgassing from the EUV resist is one of the significant challenges, which has to be addressed for realizing EUV lithography (EUVL). The outgassing might be the main contributor involved in the contamination of the mirror optics in scanners. This may result in reflectivity losses. The pragmatic outgassing test that utilizes the witness sample (WS) was used as a general method to quantify the outgassing level for commercially available chemically amplified resists (CAR). There are two types of contaminations. The first type of contamination involves a cleanable contamination that mainly comprises hydrocarbons that can be removed by the hydrogen radical cleaning. Another type of contamination includes the noncleanable contamination that remains on the WS even after hydrogen radical cleaning. Several outgas qualification results were evaluated at the EIDEC [1, 2]. The data indicated that contaminations by the CAR mainly comprised the cleanable contaminations. The data also indicated that there were almost negligible noncleanable contaminations from the CAR. EUV resist communities accelerate the development of high sensitivity resists to compensate the low power of the EUV source. Nonchemically amplified resist (nonCAR) with a new platform is a candidate for high sensitivity resists. The nonCAR includes some types of metal elements with high absorbance for EUV light. There is very limited research on the outgassing characteristics of the nonCAR. In this study, we considered an EUV exposure process in the actual EUV scanner and EUV resists were exposed in a hydrogen environment. A potential risk could result from the reaction of the hydrogen radicals generated by the EUV light with the metal elements in the nonCAR and the metal hydride outgases from the resist. This would result in a noncleanable contamination on the EUV mirror [3]. The knowledge with respect to outgassing from an organic metal complex is insufficient even in a vacuum condition. Hence, the study involved the preparation of certain types of organic metal complexes as model materials. Then, the outgassing evaluations for the materials were carried out as a fundamental studies in a vacuum condition. The results were reported in this study.
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