Class E with parallel circuit - a new challenge for high-efficiency RF and microwave power amplifiers

In this paper, a new circuit configuration of switched-mode tuned Class E power amplifiers with load network consisting of a parallel capacitance, a parallel inductance and a series resonant circuit tuned on the fundamental is defined using a detailed analytical description with a complete set of the design equations. The ideal collector voltage and current waveforms demonstrate a possibility of 100-percent efficiency. The circuit schematic of a parallel-circuit Class E power amplifier can be realized with lumped or transmission-line elements. Two examples of high power LDMOSFET and low-voltage HBT power amplifiers, utilizing a parallel-circuit Class E circuit configuration, are presented.