Schottky Barriers Derived from Metal‐Modified Polyaniline

Metal‐2,5‐diaminobenzenesulfonic acid (DABSA)-modified polyaniline Schottky junctions in which modified polyaniline is obtained from electrochemical copolymerization of aniline with DABSA were investigated. The typical dark current density vs. applied voltage characteristics for several Schottky junctions are reported. Electronic parameters such as Richardson constant, ideality factor, and barrier height are calculated. © 1999 The Electrochemical Society. All rights reserved.