X射线光电子能谱
等离子体增强化学气相沉积
硫黄
等离子体聚合
聚合
化学气相沉积
紫外线
傅里叶变换红外光谱
硫化氢
化学
分析化学(期刊)
薄膜
氢
材料科学
聚合物
化学工程
有机化学
纳米技术
工程类
光电子学
作者
Evelyne Kasparek,Jason R. Tavares,M. R. Wertheimer,Pierre‐Luc Girard‐Lauriault
标识
DOI:10.1002/ppap.201500200
摘要
Thiol (SH)-terminated surfaces have been progressively gaining interest over the past years as a consequence of their widespread potential applications. Here, SH-terminated thin films have been prepared by “co-polymerizing” gas mixtures comprising ethylene (C2H4) or butadiene (C4H6) with hydrogen sulfide (H2S). This has been accomplished by either vacuum-ultraviolet (VUV) irradiation of the flowing gas mixtures with near-monochromatic radiation from a Kr lamp, or by low-pressure r.f. plasma-enhanced chemical vapor deposition (PECVD). Varying the gas mixture ratio, R, allows one to control the films’ sulfur content as well as the thiol concentration [SH]. The deposits were characterized by X-ray photoelectron spectroscopy (XPS), before and after chemical derivatization with N-ethylmaleimide, and by ATR FTIR. VUV- and plasma-prepared coatings were found to possess very similar structures and characteristics, showing chemically bonded sulfur concentrations, [S], up to 48 at% and [SH] up to 3%. All coatings remained essentially unchanged in thickness after immersion in water for 24 h.
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