Preparation of ZnIn2S4 Film Electrodes by the SILAR Technique

Abstract Nanostructured ternary zinc indium sulfide (ZnIn 2 S 4 , ZIS) thin film electrodes were fabricated on fluorine doped tin oxide (FTO) coated glass substrates using the successive ionic layer adsorption and reaction (SILAR) technique. New procedures for the growth of ZIS films are presented. The X‐Ray diffraction (XRD) results show that the ZIS films are hexagonal structure and the band gap of the as‐prepared ZIS films is 2.5 eV. The photocurrent response of the films shows that the ZIS demonstrates the typical characteristic of n‐type semiconductor materials and the average response photocurrent of ZIS thin film is almost two times as high as that of ZnS.