无杂散动态范围
逐次逼近ADC
有效位数
线性
电子工程
电容器
CMOS芯片
12位
积分非线性
动态范围
数据转换
数模转换器
工程类
电气工程
计算机科学
转换器
电压
计算机硬件
作者
Li Dong,Yan Song,Yi Xie,Youze Xin,Kezhi Li,Xixin Jing,Bing Zhang,Xiaoyan Gui,Li Geng
出处
期刊:
日期:2021-05-16
卷期号:113: 105109-105109
被引量:1
标识
DOI:10.1016/j.mejo.2021.105109
摘要
This paper presents an effective method to arrange high linearity and area-efficient digital-to-analog converter (DAC) to enhance the resolution of successive approximation register (SAR) analog-to-digital converter (ADC). The relationship between ENOB and DAC mismatch error is theoretically analyzed, which gives the guidance of optimizing the mismatch error of DAC array. The parasitic effect on the linearity of DAC can be obtained through a normalized parasitic capacitor model, which evaluates the parasitic capacitors caused by the layout and routing of DAC array. A 10-bit 20 MS/s SAR ADC with redundancy is fabricated with 0.18 μm CMOS process. Measurement results show that the signal-to-noise and distortion ratio (SNDR) and the spurious-free dynamic range (SFDR) are 57.9 dB and 75.9 dB, respectively. The SAR ADC achieves a Walden FoM (FoMW) of 75.1 fJ/conversion step and occupies a small active area of 0.069 mm2 benefited from the compact layout.
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