An Improved Physical Model of Power Diode in the Rectifier Circuit

精密整流器 整流器(神经网络) 缓冲器 二极管 计算机科学 电子工程 拓扑(电路) 功率(物理) 算法 电压 电气工程 工程类 物理 功率因数 电容器 人工智能 量子力学 人工神经网络 随机神经网络 循环神经网络
作者
Zenan Shi,Yifei Luo,Xin Li,Ru Zhang,Wenjie Chen,Haichao Wang,Hua Zhou
出处
期刊:IEEE Journal of Emerging and Selected Topics in Power Electronics [Institute of Electrical and Electronics Engineers]
卷期号:10 (1): 1203-1218 被引量:2
标识
DOI:10.1109/jestpe.2021.3092356
摘要

Considering the weakness of the conventional physical model of power diodes in the rectifier design, an improved lumped-charge model is presented in this article to achieve both high accuracy and high efficiency in the simulation of power electronic equipment. To improve the convergence of the physical model simulation in the rectifier circuit, the transmission-line theory is implemented in the model. Furthermore, a dynamic partition method is implemented in the model to achieve high accuracy of the transient characteristics of the diode during the level transition of the rectifier, with reducing the number of numerical solutions through reallocation of computing resources. Compared with the conventional model, the simulation error is decreased. This successfully adopts the physical model to realize both equipment-level simulation and high accuracy of device simulation in the design of the rectifier and $RC$ snubber circuit. The experimental results show that the error of the proposed model is less than 10% and 5% the minimum, which is a maximum 30% decreasing compared with that of the conventional model. The half-cycle ( $500~{\mu \text {s}}$ ) simulation of the rectifier circuit with 10 and 20 power diodes cost 18 and 33 s.
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