发光二极管
材料科学
光电子学
二极管
紫外线
光学
光源
辐射传输
物理
作者
Huabin Yu,Zhongjie Ren,Muhammad Hunain Memon,Shi Fang,Danhao Wang,Zhongling Liu,Haochen Zhang,Feng Wu,Jiangnan Dai,Changqing Chen,Haiding Sun
出处
期刊:Chinese Optics Letters
[Shanghai Institute of Optics and Fine Mechanics]
日期:2021-01-01
卷期号:19 (8): 082503-082503
被引量:13
标识
DOI:10.3788/col202119.082503
摘要
The AlGaN-based deep ultraviolet (DUV) light-emitting diode (LED) is an alternative DUV light source to replace traditional mercury-based lamps. However, the state-of-the-art DUV LEDs currently exhibit poor wall-plug efficiency and low light output power, which seriously hinder their commercialization. In this work, we design and report a tunnel-junction-cascaded (TJC) DUV LED, which enables multiple radiative recombinations within the active regions. Therefore, the light output power of the TJC-DUV LEDs is more than doubled compared to the conventional DUV LED. Correspondingly, the wall-plug efficiency of the TJC-DUV LED is also significantly boosted by 25% at 60 mA.
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