碲化镉汞
光学
探测器
暗电流
化学气相沉积
时间常数
响应时间
红外线的
工作温度
光电子学
材料科学
光电探测器
物理
计算机科学
热力学
电气工程
计算机图形学(图像)
工程类
作者
P. Madejczyk,W. Gawron,A. Kębłowski,Piotr Martyniuk,M. Kopytko,Wioletta Pusz,D. Stępień,Jarosław Rutkowski,A. Piotrowski,J. Piotrowski,Antoni Rogalski
出处
期刊:Optical Engineering
[SPIE - International Society for Optical Engineering]
日期:2017-08-24
卷期号:56 (08): 1-1
被引量:4
标识
DOI:10.1117/1.oe.56.8.087103
摘要
Theoretical and experimental investigations on the response time improvement of unbiased long-wave infrared (LWIR) HgCdTe detectors operating at temperatures T=230 K were presented. Metal–organic chemical vapor deposition technology is an excellent tool in fabrication of different HgCdTe detector structures with a wide range of composition and donor/acceptor doping and without postgrown ex-situ annealing. The time constant is lower in biased detectors due to Auger-suppression phenomena and reduction of diffusion capacitance related to a wider depletion region. The relatively high bias current requirements and excessive low-frequency noise, which reduces the detectivity of biased detectors, inspire research on the time constant improvement of unbiased detectors. The response time of high-operating temperature LWIR HgCdTe detectors revealed complex behavior being dependent on the applied reverse bias, the operating temperature, the absorber thickness and doping, the series resistance, and the electrical area of the devices. The response time of 2 ns was achieved for unbiased 30×30 μm HgCdTe structures with λ50%=10.6 μm operating at T=230 K.
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