神经形态工程学
材料科学
锰铁矿
图层(电子)
电场
电阻式触摸屏
数码产品
光电子学
单层
电子线路
钙钛矿(结构)
纳米技术
电气工程
凝聚态物理
计算机科学
铁磁性
物理
工程类
机器学习
量子力学
人工神经网络
化学工程
作者
Jon‐Olaf Krisponeit,B. Damaschke,V. Moshnyaga,K. Samwer
标识
DOI:10.1103/physrevlett.122.136801
摘要
Materials exhibiting reversible resistive switching in electrical fields are highly demanded for functional elements in oxide electronics. In particular, multilevel switching effects allow for advanced applications like neuromorphic circuits. Here, we report a structurally driven switching mechanism involving the so-called "dead" layers of perovskite manganite surfaces. Forming a tunnel barrier whose thickness can be changed in monolayer steps by electrical fields, the switching effect exhibits well-defined and robust resistive states.
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