兴奋剂
材料科学
光电子学
量子点
钙钛矿(结构)
二极管
图层(电子)
量子效率
聚合物
光致发光
分析化学(期刊)
纳米技术
结晶学
复合材料
化学
物理
有机化学
作者
Xin Lin,Xiaoming Wu,Jiajin Zheng,Hongsong Rui,Zheng Zhang,Yulin Hua,Shougen Yin
标识
DOI:10.1109/led.2019.2932134
摘要
In this letter, a novel hole transport layer (HTL) of poly-(Nvinylcarbazole) (PVK) doped with poly[bis(4-phenyl) (2,4,6-trimethylphenyl)amine] (PTAA) was employed in solution processed CH 3 NH 3 PbBr quantum dots light-emitting diode (QLED). By optimizing the doping ratio of the PVK and the PTAA, the hole transport ability could be effectively improved, and the hole injection barrier could also be reduced, which resulted in the performance enhancement of the device. The optimal QLED exhibits a maximum luminance of 7352 cd/m 2 at 9 V, a maximum current efficiency of 11.1 cd/A, and a low turn-on voltage of 3.2 V.
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