铁电性
材料科学
掺杂剂
光电子学
电场
肖特基势垒
逆变器
量子隧道
兴奋剂
电子工程
电气工程
电压
工程类
物理
量子力学
二极管
电介质
作者
Parthasarathi Ghosh,Brinda Bhowmick
标识
DOI:10.1080/00207217.2019.1600744
摘要
In this paper, the design geometry of Ferroelectric Dopant Segregated Schottky Barrier Tunnel Field Effect Transistor (Fe DS-SBTFET) has been proposed. Various electrical properties such as ION/IOFF ratio and subthreshold swing (SS) of the proposed design have been premeditated and compared with different asymmetric structures. The impact of various types and thickness of buffer on the ferroelectric properties have been analysed. The device has been optimised for various doping concentrations and lengths of the dopant segregated layer (DSL). The digital applications of the proposed device in terms of complementary TFET digital inverter circuit have been studied. The transient characteristics and the delay parameters by considering various ferroelectric thicknesses have been analysed. Moreover, the transfer characteristics and electric field have been explored in the presence and absence of ferroelectric layer to obtain a better insight into the ferroelectric properties of the proposed structure. The electric field at the tunnelling junction is enhanced by the presence of ferroelectric layer which improves the ON current. The structure with ferroelectric thickness of 6 nm provides the best ION/IOFF ratio of 1.2 × 109 and SS of 14 mV/dec.
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