图像拼接
材料科学
化学气相沉积
堆积
单层
退火(玻璃)
外延
二硒化钨
纳米技术
光电子学
微晶
过渡金属
基质(水族馆)
薄膜
制作
铂金
异质结
金属
可扩展性
晶体生长
纳米光刻
沉积(地质)
作者
Honglin Wang,Jiawei Li,Chen Meng,Hongwei Zhu
出处
期刊:Nano Letters
[American Chemical Society]
日期:2026-08-04
标识
DOI:10.1021/acs.nanolett.6c02618
摘要
Abstract Seamless stitching of aligned two-dimensional (2D) domains offers a promising route toward scalable single-crystal 2D materials but remains challenging for platinum diselenide (PtSe2), whose strong interlayer interaction favors vertical stacking over lateral growth. Here, we report a chemical vapor deposition strategy combining substrate engineering with OH-assisted growth to achieve stitched PtSe2 films. Localized prestrain followed by strain-relief annealing converts polycrystalline Au foils into centimeter-scale high-index single-crystal substrates, enabling the growth of dense, unidirectionally aligned millimeter-scale PtSe2 ribbons. Introducing NaOH into the precursor promotes lateral epitaxy while suppressing vertical overgrowth, allowing adjacent ribbons to stitch into continuous, predominantly single-crystal PtSe2 films down to the monolayer limit. The resulting films exhibit thickness-dependent electrical properties, evolving from semiconducting to bipolar semiconducting and semimetallic behavior. This strategy provides a practical route for scalable PtSe2 synthesis and highlights alkali-assisted epitaxy as a general approach for growing two-dimensional transition metal dichalcogenides.
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