Resistivity distribution and donor properties of antimony-doped n-type Czochralski silicon ingots

We investigate antimony (Sb)-doped Czochralski-grown silicon as an alternative n -type substrate for photovoltaic applications, and characterize their axial resistivity distribution, donor properties, and mechanical strength. We find that Sb-doped ingots can achieve a more uniform resistivity distribution along the axial direction compared to P-doped counterparts. Dopant concentration profiles in P-doped ingots can be accurately modelled using the standard Scheil's equation, accounting only for dopant segregation during solidification. In contrast, modelling Sb-doped ingots requires consideration of both dopant segregation and evaporation effects to fit the dopant distribution accurately. Using electron paramagnetic resonance spectroscopy at 9 K, we observe two hyperfine lines in P-doped samples, and six hyperfine lines for Sb 121 and eight for Sb 123 isotopes, with the number of hyperfine lines governed by the nuclear spins. We further identify two-atom Sb clustering in the Sb-doped wafers, confirmed through simulations of the additional weak electron paramagnetic resonance peaks. Finally, we find that 140 μm as-cut planar Sb-doped wafers exhibit slightly higher mechanical strength compared to P-doped wafers. • Antimony (Sb)-doped n -type wafers are launched as a promising alternative to traditional Phosphorus (P)-doped Cz-Si ingots. • Sb-doped ingots have uniform axial resistivity distribution compared to P-doped ingots. • Dopant concentration profiles in Sb-doped ingots can be accurately modelled considering both dopant segregation and evaporation effects. • Sb-doped ingots showed two-distinct EPR features consisting of 6 hyperfine lines for Sb 121 and 8 for Sb 123 isotopes.