Estimation of pulsed laser-induced single event transient in a partially depleted silicon-on-insulator 0.18-μm MOSFET

In this paper, we investigate the single event transient (SET) occurring in partially depleted silicon-on-insulator (PDSOI) metal—oxide—semiconductor (MOS) devices irradiated by pulsed laser beams. Transient signal characteristics of a 0.18-μm single MOS device, such as SET pulse width, pulse maximum, and collected charge, are measured and analyzed at wafer level. We analyze in detail the influences of supply voltage and pulse energy on the SET characteristics of the device under test (DUT). The dependences of SET characteristics on drain-induced barrier lowering (DIBL) and the parasitic bipolar junction transistor (PBJT) are also discussed. These results provide a guide for radiation-hardened deep sub-micrometer PDSOI technology for space electronics applications.