Thickness-Dependent Crystallization of Ultrathin Antimony Thin Films for Monatomic Multilevel Reflectance and Phase Change Memory Designs

Phase change materials, with more than one reflectance and resistance states, have been a subject of interest in the fields of phase change memories and nanophotonics. Although most current research focuses on rather complex phase change alloys, e.g., Ge2Sb2Te5, recently, monatomic antimony thin films have aroused a lot of interest. One prominent attractive feature is its simplicity, giving fewer reliability issues like segregation and phase separation. However, phase transformation and crystallization properties of ultrathin Sb thin films must be understood to fully incorporate them into future memory and nanophotonics devices. Here, we studied the thickness-dependent crystallization behavior of pulsed laser-deposited ultrathin Sb thin films by employing dynamic ellipsometry. We show that the crystallization temperature and phase transformation speed of as-deposited amorphous Sb thin films are thickness-dependent and can be precisely tuned by controlling the film thickness. Thus, crystallization temperature tuning by thickness can be applied to future memory and nanophotonic devices. As a proof of principle, we designed a heterostructure device with three Sb layers of varying thicknesses with distinct crystallization temperatures. Measurements and simulation results show that it is possible to address these layers individually and produce distinct and multiple reflectance profiles in a single device. In addition, we show that the immiscible nature of Sb and GaSb could open up possible heterostructure device designs with high stability after melt-quench and increased crystallization temperature. Our results demonstrate that the thickness-dependent phase transformation and crystallization dynamics of ultrathin Sb thin films have attractive features for future memory and nanophotonic devices.