Elasto-Thermodiffusive Microtemperature Model Induced by a Mechanical Ramp-Type of Nanoscale Photoexcited Semiconductor

In this study, a novel theoretical approach to describe thermo-optical elastic materials is proposed. This formulation offers insights into the relationship between plasma waves and thermomechanical waves when the microtemperature properties of semiconductor materials such as silicon are taken into account. The proposed model involves incorporating the concept of microtemperature effect according to photothermal (PT) excitation processes in nonlocal photo-thermoelasticity. The investigation of the electron-hole interaction concerning the elasto-thermodiffusion (ETD) theory in the context of thermoelastic (TD) and electronic (ED) deformation is the main focus of the work. The advanced model is utilized to analyze how the mechanical loading of ramp-like structures impacts the unrestricted nonlocality semiconductor material on a free outer plane. The Laplace transform approach in one-dimensional (1D) provides an analytical solution for main non-dimensional thermo-photo-elastic fields (the hole charge carrier field, the displacement (acoustic) wave, thermal wave, and plasma wave (carrier density). The primary fields in the Laplace domain are obtained analytically, and boundary conditions are established using a mechanical ramp type. Using a numerical inverse Laplace transform, full time domain solutions for the fundamental fields are obtained numerically according to the Riemann-sum approximation approach. The graphical representations illustrate and discuss the outcomes of the main physical fields.