制作
材料科学
基质(水族馆)
光电子学
功率损耗
功率(物理)
工程物理
电气工程
工程类
地质学
电压
物理
医学
海洋学
替代医学
病理
量子力学
作者
David A. van Nijen,Tristan Stevens,Yavuzhan Mercimek,Guangtao Yang,R.A.C.M.M. van Swaaij,Miro Zeman,Olindo Isabella,Patrizio Manganiello
标识
DOI:10.1002/solr.202300829
摘要
Nowadays, an increasing share of photovoltaic (PV) systems makes use of module‐ or submodule‐level power electronics (PE). Furthermore, PE is used in stand‐alone devices powered by PV‐storage solutions. One way to facilitate further implementation of PE in PV applications is to integrate PE components into crystalline silicon PV cells. Herein, the COSMOS device is introduced, denoting COmbined Solar cell and metal‐oxide‐semiconductor field‐effect transistor (MOSFET). Specifically, the combined manufacturing of lateral power MOSFETs and interdigitated back contact solar cells with tunnel‐oxide passivated contacts (TOPCon) on a single wafer is reported. Many steps of the proposed process flow are used for the fabrication of both devices, enabling cost‐effective integration of the MOSFET. Both n‐type solar cells with integrated p‐channel MOSFETs (PMOS) and p‐type solar cells with integrated n‐channel MOSFETs (NMOS) are successfully manufactured. NMOS devices perform better in achieving low on‐resistance, while PMOS devices exhibit lower leakage currents. Furthermore, the study reveals integration challenges where off‐state leakage currents of the MOSFET can increase due to illumination and specific configurations of monolithic interconnections between the MOSFET and the solar cell. Nevertheless, for both n‐type and p‐type solar cells, efficiencies exceeding 20% are achieved, highlighting the potential of the proposed process for COSMOS devices.
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