A Method for Improving SOA Performance of SGT MOSFET

An innovative wide safe operating area (SOA) cell integration technology is proposed and experimentally validated to resolve the SOA and trade-off in power MOSFET for hot-swappable applications. By implementing differentiated body doping within the SGT MOSFET, the temperature sensitivity of $V_{\text {th }}$ is reduced, enabling enhanced SOA performance without compromising conduction losses. The experimental results show that under the conditions of $V_{\mathrm{gs}}=10 \mathrm{~V}, V_{\mathrm{ds}}=60 \mathrm{~V}$, and $\mathrm{PT}=1 \mathrm{~ms}$, the integrated wide SOA unit device’s SOA current increases from 8.931 A to 13.368 A, an increase of $50 \%$, while maintaining a low $R_{\mathrm{ds}}$ of $1.58 \mathrm{~m} \Omega$ and $B V$ of 100.8 V by double-layer epitaxy process, The proposed manufacturing process is compatible with the conventional process, does not affect dynamic characteristics, and forms standardized process scheme that can be extended to trench type devices with different breakdown voltages.