P‐1.20: Investigation of Illumination and Temperature on the Stability of Indium‐Gallium‐Zinc‐Oxide Thin‐Film Transistors

In recent years, the advanced low temperature polysilicon oxide (LTPO) technology has been actively researched for application in virtual reality (VR) and mixed reality (MR) displays, showcasing tremendous potential for commercial value. However, the amorphous Indium Gallium Zinc Oxide (a‐IGZO) thin‐film transistors (TFTs) remain suffer from stability issue that require urgent resolution[1,2]. This study systematically investigates the influence of illumination and temperature conditions on the negative bias temperature illumination stress (NBTIS) stability of a‐IGZO TFT devices. By characterizing the threshold voltage (Vth) and carrier mobility, the research explores the influence of illumination and temperature on a‐IGZO TFT devices and provides an explanation of the underlying mechanisms. Moreover, different bottom gate shielding distances are designed to assess the influence of illumination on the stability. This work offers significant insights and serves as an important reference for enhancing the stability of a‐IGZO TFT devices.